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Growth and storage properties of Zn:Ce:Mn:LiNbO3 crystals
Author(s): Chaozhong Zhao; Chunhui Yang; Yuheng Xu
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Paper Abstract

Doping ZnO with the concentration of 3mol% and 7mol% in Ce:Mn:LiNbO3, respectively, Zn:Ce:Mn:LiNbO3 crystals were grown by Czochralski method. The optical damage resistance ability of crystals was measured. The optical damage resistance ability of Zn (7mol%):Ce:Mn:LiNbO3 crystal is two orders magnitude higher than that of Ce:Mn:LiNbO3 crystal. The exponentional gain coefficient, diffraction efficiency, response time and effective charge concentration were also obtained. The response speed of Zn(3mol%):Ce:Mn:LiNbO3 and Zn(7mol%):Ce:Mn:LiNbO3 crystal is two times and four times higher than that of Ce:Mn:LiNbO3, respectively. The mechanism of optical damage resistance ability of Zn:Ce:Mn:LiNbO3 crystal was researched.

Paper Details

Date Published: 17 September 2002
PDF: 5 pages
Proc. SPIE 4930, Advanced Optical Storage Technology, (17 September 2002); doi: 10.1117/12.483305
Show Author Affiliations
Chaozhong Zhao, Harbin Normal Univ. (China)
Chunhui Yang, Harbin Institute of Technology (China)
Yuheng Xu, Harbin Institute of Technology (China)

Published in SPIE Proceedings Vol. 4930:
Advanced Optical Storage Technology
Duanyi Xu; Seiya Ogawa, Editor(s)

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