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Proceedings Paper

Ge-doped film process in waveguide application
Author(s): Nick Singh; Sean Weng Kong Lee; Chris Hodson; Andy Goodyear; Gary A. Ditmer; Mike Cooke
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Paper Abstract

Plasma Enhanced Chemical Vapour Deposition (PECVD) was used in the development of silica layers for use in planar waveguide applications. The addition of GeH4 to silica was used to control the refractive index of core layers with index differences core-clad in the range of 0.2%-1.3%. High rate SiO2 and Ge-doped SiO2 films have been deposited on to 4” Si <100> wafers. The ‘as deposited’ and ‘annealed’ film properties have been compared, including film uniformity, RI, RI uniformity and stress have been compared. Ge-doped SiO2 films up to 10 um thickness have been deposited and annealed for the above study. Refractive index uniformity of ± 0.0002 was achieved after annealing for 4” silicon wafers. The core layers were shown to be capable of producing optical losses of <0.1dB/cm when incorporated into a typical waveguide design.

Paper Details

Date Published: 16 September 2002
PDF: 10 pages
Proc. SPIE 4929, Optical Information Processing Technology, (16 September 2002); doi: 10.1117/12.483242
Show Author Affiliations
Nick Singh, Oxford Instruments (United Kingdom)
Sean Weng Kong Lee, Oxford Instruments (Singapore)
Chris Hodson, Oxford Instruments (United Kingdom)
Andy Goodyear, Oxford Instruments (United Kingdom)
Gary A. Ditmer, Oxford Instruments (Singapore)
Mike Cooke, Oxford Instruments (United Kingdom)


Published in SPIE Proceedings Vol. 4929:
Optical Information Processing Technology
Guoguang Mu; Francis T. S. Yu; Suganda Jutamulia, Editor(s)

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