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Proceedings Paper

Design and simulation of integrated CMOS-compatible capacitive absolute pressure-sensing microsystems
Author(s): Minxin Zhou; Qing-An Huang; Ming Qin
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Paper Abstract

Transducers, as the interface between the environment and circuits inside the systems, have been developed to be core elements of Micro-Electro-Mechanic System ( MEMS ) or microsystems. Integration of the transducer and the signal process circuit on a chip using the same technology has been the bottleneck of microsystems design. A new method of pressure-sensing microsystem has been proposed in this paper. The sensor consists of a capacitive structure fabricated by 2-layer polysilicon CMOS IC technology and a detection integrated circuit on the same chip. Front-end processing is unnecessary and only back-end processing with several photolithography steps is utilized to achieve the micromachined structure after the integrated circuit part is completed. The entire system converts absolute pressure changes, in the pressure range useful for barometric applications, from 0.5 bar to 1.5bar with the temperature between -25°C and 60°C, to frequency changes. The microsystem is designed using the standard software tools such as ANSYSTM and H-SPICE. The simulation show that the microsystem would be achieved with high performance. A sensitivity of 1Hz/4fF could be achieved.

Paper Details

Date Published: 10 September 2002
PDF: 9 pages
Proc. SPIE 4928, MEMS/MOEMS Technologies and Applications, (10 September 2002); doi: 10.1117/12.483160
Show Author Affiliations
Minxin Zhou, Southeast Univ. (China)
Qing-An Huang, Southeast Univ. (China)
Ming Qin, Southeast Univ. (China)


Published in SPIE Proceedings Vol. 4928:
MEMS/MOEMS Technologies and Applications
Guofan Jin; John S. McKillop; Kazuhiro Hane, Editor(s)

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