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Proceedings Paper

Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD
Author(s): Deheng Zhang; Yunyan Liu
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Paper Abstract

This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the realx time was relatively short. With an increase in doped Mg content, the samples became P type, the photocurrent response become weak and the realx time became long.

Paper Details

Date Published: 17 September 2002
PDF: 4 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483109
Show Author Affiliations
Deheng Zhang, Shandong Univ. (China)
Yunyan Liu, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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