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Proceedings Paper

Valance intersubband laser with strain-symmetrized silicon-based Si-Ge superlattice
Author(s): Yanwu Lu; Can Lu; Gregory Sun
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Paper Abstract

This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattice grown on a relaxed Si1-xGex buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of strain-symmetrized silicon/germanium superlattices within 4×4 Luttinger model. The valence band offsets and strain parameters are calculated by Van de Walle's model-solid theory. Analysis of the in-plane energy dispersion shows that the light-hole effective mass is inverted in the k-space region. The laser structure can be desigend with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands in local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved wiht a pumping current density 10KA/cm2.

Paper Details

Date Published: 17 September 2002
PDF: 7 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483098
Show Author Affiliations
Yanwu Lu, Northern Jiaotong Univ. (China)
Can Lu, Peking Univ. (China)
Gregory Sun, Univ. of Massachusetts/Boston (United States)

Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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