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Proceedings Paper

Numerical simulation study on Cz growth of silicon single crystal in a magnetic field
Author(s): Jinghe Liu; Jing Sun; Zhongli Zhu; Ying Cao; Ling Liu; Yingwei Wang
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Paper Abstract

In this paper, Cz growth of silicon single crystal in a magnetic field was studied with numerical simulation method. The results of numerical simulation showed that convection of melt could be controlled when the magnetic field was added, moreover, forced convection was controlled much larger than natural convection. The oxygen concentration of the interface would decrease with the strengthening of the magnetic field intensity, but the temperature field of the melt did not change with the strenghtening of the magnetic field.

Paper Details

Date Published: 17 September 2002
PDF: 6 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483096
Show Author Affiliations
Jinghe Liu, Changchun Institute of Optics and Fine Mechanics (China)
Jing Sun, Changchun Institute of Optics and Fine Mechanics (China)
Zhongli Zhu, Changchun Univ. of Science and Technology (China)
Ying Cao, Changchun Univ. of Science and Technology (China)
Ling Liu, Changchun Univ. of Science and Technology (China)
Yingwei Wang, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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