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Proceedings Paper

Investigation of transport properties of doped GaAs epitaxial layer using an open photoacoustic cell
Author(s): Sajan D. George; S. Dilna; P. Suresh Kumar; Periasamy Radhakrishnan; V. P. N. Nampoori; C. P. G. Vallabhan
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Paper Abstract

An open photoacoustic cell under heat transmission configuration has been employed to evaluate the thermal and transport properties of n-type Si doped GaAs epitaxial layer and p-type Be doped GaAs epitaxial layer grown on GaAs substrate by molecular beam epitaxial method. The variation of the characteristics of the photoacoustic signal with chopping frequency clearly indicate the different heat generation mechanisms occurring in the sample under optical excitation at 2.54eV with laser beam. The values of thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time have been evaluated for the sample by fitting the experimentally obtained phase of the photoacoustic signal with the theoretical model. It has been observed that the nature of dopant influences the values of thermal and transport properties of the semiconductor samples.

Paper Details

Date Published: 17 September 2002
PDF: 7 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483079
Show Author Affiliations
Sajan D. George, Cochin Univ. of Science and Technology (India)
S. Dilna, Cochin Univ. of Science and Technology (India)
P. Suresh Kumar, Cochin Univ. of Science and Technology (India)
Periasamy Radhakrishnan, Cochin Univ. of Science and Technology (India)
V. P. N. Nampoori, Cochin Univ. of Science and Technology (India)
C. P. G. Vallabhan, Cochin Univ. of Science and Technology (India)


Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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