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Proceedings Paper

Mn-activated yttria-based multicomponent oxide phosphors for thin film EL devices
Author(s): Tadatsugu Minami; Youhei Kobayashi; Toshihiro Miyata; Shingo Suzuki
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Paper Abstract

High-luminance EL emissions were found to be obtainable using newly developed Mn-activated Y2O3-based multicomponent oxide phosphors composed of Y2O3 in combination with another binary compound, B2O3, Al2O3, Ga2O3, In2O3, Gd2O3, GeO2 or SiO2. The EL characteristics were investigated using a thick ceramic sheet-insulating-layer-type TFEL device. The Mn-activated Y2O3-based phosphor thin films were deposited by rf magnetron sputtering and postannealed. Luminances above 1000 cd/m2 were obtained in TFEL devices fabricated using a ((Y2O3)X-(Ga2O3)1-X):Mn, a ((Y2O3)X-(Gd2O3)1-X):Mn, a ((Y2O3)X-(Al2O3)1-X):Mn or a ((Y2O3)X-(GeO2)1-X):Mn thin film prepared with various compositions (X) and driven at 1 kHz. In particular, high luminances above 7000 cd/m2 for yellow emission were obtained in 1 kHz-driven TFEL devices using a ((Y2O3)0.6-(GeO2)0.4):Mn or a (Y2O3)0.5-(Ga2O3)0.5):Mn thin film prepared with a Y2O3 content of 60 or 50 mol.percent, respectively. In addition, high luminances above 500 cd/m2 and luminous efficiencies of approximately 10 lm/W were obtained in these TFEL devices driven at 60 Hz. High-luminance multicolor emissions that changed from yellow to green could be obtained in TFEL devices using a ((Y2O3)1-X-(Ga2O3)X):Mn thin film by increasing the Y2O3 content from 0 to 100 mol. percent.

Paper Details

Date Published: 17 September 2002
PDF: 11 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483076
Show Author Affiliations
Tadatsugu Minami, Kanazawa Institute of Technology (Japan)
Youhei Kobayashi, Kanazawa Institute of Technology (Japan)
Toshihiro Miyata, Kanazawa Institute of Technology (Japan)
Shingo Suzuki, Kanazawa Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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