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Proceedings Paper

MOCVD growth and optical characterization of CdS and ZnCdS epilayers on GaAs substrate
Author(s): Jiying Zhang; Zhenzhong Zhang; C. X. Shan; De Zen Shen; Yichun Liu; Youming Lu; X. W. Fan
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Paper Abstract

CdS and ZnCdS epilayers are grown on GaAs by LP-MOCVD. It is found that the thickness of CdS epilayer is greatly influenced by the growth temperature. In our case, the sticking coefficient of CdS is nearly zero at temperatures greater than or equal to 500°C. The wide values of FWHMs of CdS emission band are thought as a result of the poor crystal quality caused due to the deviation of stoichiometry ratio of Cd/S. The crystal quality can be imprved with increasing the thickness of CdS epilayers when the flow rate of H2S is selected. The growth conditions of Zn0.76Cd0.24S epilayers aer investigated and the deep center emission band is attributed to sulfer-related defect.

Paper Details

Date Published: 17 September 2002
PDF: 5 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483049
Show Author Affiliations
Jiying Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Zhenzhong Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
C. X. Shan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
De Zen Shen, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yichun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Youming Lu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
X. W. Fan, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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