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Proceedings Paper

Properties for GaN films on silicon (111) substrates
Author(s): Yingge Yang; Hong-Lei Ma; Cheng-Shan Xue; Hui-Zhao Zhuang; Jin Ma
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Paper Abstract

High-quality gallium nitride (GaN) films were prepared on Si substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SAED reveal that the films consists of hexagonal wurtzite GaN wiht c-axis oriented polycrystalline grains. A strong UV photoluminescence located at 354 nm is observed for room temperature measurement. The bandgap of these films has a blueshift wiht respect to bulk GaN.

Paper Details

Date Published: 17 September 2002
PDF: 6 pages
Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); doi: 10.1117/12.483041
Show Author Affiliations
Yingge Yang, Shandong Univ. (China)
Hong-Lei Ma, Shandong Univ. (China)
Cheng-Shan Xue, Shandong Normal Univ. (China)
Hui-Zhao Zhuang, Shandong Normal Univ. (China)
Jin Ma, Shandong Univ. (China)

Published in SPIE Proceedings Vol. 4918:
Materials, Devices, and Systems for Display and Lighting
Fuxi Gan; Ming Hsien Wu; Lionel C. Kimerling, Editor(s)

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