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Proceedings Paper

Influence of pulse duration and annealing on crystallinity and luminescence of laser-deposited Er-doped YAG (YAP) layers
Author(s): Miroslav Jelinek; Jiri Oswald; Vaclav Studnicka; Jan Lancok; Martin Pavelka; Agryro Klini; Costas Fotakis
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Paper Abstract

Er- doped YAG and YAP layers were grown by nanosecond (20 ns) and subpicosecond (450 fs) KrF laser ablation under a wide set of deposition conditions. Results of characterization of films crystallinity and luminescence are presented and discussed. Films grown in ns regime were almost amorphous for substrate temperature to Ts ~ 1000 oC, while films grown in subps regime were partly crystalline, even at low Ts. Film crystallinity was also studied after annealing of amorphous layers under vacuum with CO2 and KrF excimer lasers. Luminescence corresponding to Er+3 ions was observed for all samples.

Paper Details

Date Published: 12 September 2002
PDF: 7 pages
Proc. SPIE 4915, Lasers in Material Processing and Manufacturing, (12 September 2002); doi: 10.1117/12.482905
Show Author Affiliations
Miroslav Jelinek, Institute of Physics (Czech Republic)
Jiri Oswald, Institute of Physics (Czech Republic)
Vaclav Studnicka, Institute of Physics (Czech Republic)
Jan Lancok, Institute of Physics (Czech Republic)
Martin Pavelka, Institute of Physics (Czech Republic)
Agryro Klini, Institute of Electronic Structure and Laser/FORTH (Greece)
Costas Fotakis, Institute of Electronic Structure and Laser (Greece)


Published in SPIE Proceedings Vol. 4915:
Lasers in Material Processing and Manufacturing
ShuShen Deng; Tatsuo Okada; Klaus Behler; XingZong Wang, Editor(s)

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