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Proceedings Paper

Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source
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Paper Abstract

New configuration is presented for ultra-fast at-wavelength inspection of defects on multilayer mask blanks. Key ideas are detecting defects in a high NA dark-field observation by using a Schwarzschild objective, sub-micron resolution 2D imaging of mask surface on a detector, and large etendue illumination by using a laser-plasma source. Expected time for inspecting a whole mask is shorter than 2 hours.

Paper Details

Date Published: 2 June 2003
PDF: 8 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.482811
Show Author Affiliations
Toshihisa Tomie, National Institute of Advanced Industrial Science and Technology (Japan)
Tsuneo Terasawa, MIRAI-ASET (Japan)
Yoshihiro Tezuka, MIRAI-ASET (Japan)
Masaaki Ito, MIRAI-ASET (Japan)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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