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Proceedings Paper

Characterization of 193-nm resist layers by CD-SEM sidewall imaging
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Paper Abstract

In this work the profile reconstruction capability of the Appplied Materials NanoSEM 3D CD-SEM is evaluated. The system allows the fully automatic reconstruction of profiles by evaluating profiles measured at two different beam tilt angles. From two different tilt angles up to 15 degrees the reconstruction of side-wall profiels is possible in a quick and non-destructive way even for negatively sloped profiles. The sensitivity of profile reconstruction especially with respect to height and undercut detection in dependence of structure height and beam tilt angle is discussed. We investigate precision and accuracy of profile reconstruction by comparing results from profile reconstruction to AFM and X-SEM results. We show that the side-wall angle can accurately be detected for 193nm resist structures even for negatively sloped profiles. This enables the system for the production use especially for monitoring of such profiles which cannot be detected by top-down CD-SEM so far.

Paper Details

Date Published: 2 June 2003
PDF: 9 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.482808
Show Author Affiliations
Thomas Marschner, Infineon Technologies GmbH (Germany)
Christian Stief, Applied Materials, Inc. (Germany)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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