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Proceedings Paper

Run-to-run CD error analysis and control with monitoring of effective dose and focus
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Paper Abstract

We have developed in-line dose and focus monitoring techniques for the detailed analysis of critical dimension error and accurate process control. From exposed wafers, effective does and focus are measured with specificed monitor marks built on a reticle. The contributions of effective dose and focus to critical dimension error on device chips were clarified in a fabrication proces of 110 nm isolated pattern with a KrF scanner. The critical dimensions error was described as a function of effective dose and focus, which include various process fluctuations. We could determine whether current exposure settings such as dose input and focus input were adequate or not. Based on the experimental data, we estimated the benefit of simultaneous Run-to-Run control of dose and focus. The estimation clarifies that it realizes total critical dimension control including Run-to-Run and intra-Run.

Paper Details

Date Published: 2 June 2003
PDF: 8 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.482807
Show Author Affiliations
Masafumi Asano, Toshiba Corp. (Japan)
Tadahito Fujisawa, Toshiba Corp. (Japan)
Kyoko Izuha, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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