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Proceedings Paper

Efficient simulation of light diffraction from three-dimensional EUV masks using field decomposition techniques
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Paper Abstract

As the opportunities for experimental studies are still limited, a predictive simulation os EUV lithography is very important for a better understanding of the technology. One of the most critical issues in modeling of EUV lithography is the description of the mask. Typical absorber heights in the range between 80 and 100nm are more than 5 times larger than the wavelength of the used EUV radiation. Therefore, it is virtually impossible to perform parameter studies for 3D EUV masks, such as arrays of contacts or posts, with nowadays standard computers by straightforward application of finite-difference time-domain (FDTD) algorithms, which are used for the rigorous electromagnetic field simulatin of optical masks. This paper discusses the application of field decompsition techniques for an efficient simulation of 3D EUV-masks with FDTD algorithms. Comparisons with full 3D simulations are used to evaluate the accuracy and the performance of the proposed approach. The application of the new QUASI 3D rigorous electromagnetic field simulation for EUV masks reduces memory requirements and computing time by a factor of at least 100. The implemented simulation appraohc is applied for a first exploration of mask induced imaging artifacts such as placement errors, telecentricity errors, Bossung asymmetries, and focus shifts for 3D EUV masks.

Paper Details

Date Published: 16 June 2003
PDF: 12 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.482744
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Christian K. Kalus, SIGMA-C GmbH (Germany)
Thomas Schmoeller, SIGMA-C GmbH (Germany)
Andreas Wolter, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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