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Proceedings Paper

Studies of ESD-related failure patterns of Agilent oxide VCSELs
Author(s): Joachim J. Krueger; Reena Sabharwal; Scott A. McHugo; Kimanh Nguyen; Ningxia Tan; Naginder Janda; Myrna S. Mayonte; Mike Heidecker; David Eastley; Mark R. Keever; Christopher P. Kocot
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Paper Abstract

Electrostatic Discharge (ESD) damage is considered to be the leading cause for IC field failures. With increasing integration densities, devices tend to become more and more sensitive to ESD events. This observation holds in particular true for 850nm VCSELs, as the quest for higher modulation frequencies calls for shrinking device dimensions and aperture sizes in particular. This publication is geared towards an understanding of the various factors that lead to ESD-related failures of oxide VCSELs. A broad variety of current VCSEL product lines at Agilent have been investigated in respect to their ESD resistance and related long-term reliability. Intentionally stressed devices have been characterized in terms of their electrical, optical and visual failure patterns as well as the medium time-to-failure. Cross-sectional and plan-view TEM have been employed to localize ESD damage and its propagation. For the first time, emission microscopy has been used to study the electroluminescence pattern of damaged VCSELs at very low currents. The paper will conclude by listing experimental signatures allowing for differentiation between ESD and other failure modes. Based upon these, effective screening methods are proposed.

Paper Details

Date Published: 17 June 2003
PDF: 11 pages
Proc. SPIE 4994, Vertical-Cavity Surface-Emitting Lasers VII, (17 June 2003); doi: 10.1117/12.482632
Show Author Affiliations
Joachim J. Krueger, Agilent Technologies (United States)
Reena Sabharwal, Agilent Technologies (United States)
Scott A. McHugo, Agilent Technologies (United States)
Kimanh Nguyen, Agilent Technologies (United States)
Ningxia Tan, Agilent Technologies (United States)
Naginder Janda, Agilent Technologies (United States)
Myrna S. Mayonte, Agilent Technologies (United States)
Mike Heidecker, Agilent Technologies (United States)
David Eastley, Agilent Technologies (United States)
Mark R. Keever, Agilent Technologies (United States)
Christopher P. Kocot, Agilent Technologies (United States)


Published in SPIE Proceedings Vol. 4994:
Vertical-Cavity Surface-Emitting Lasers VII
Chun Lei; Sean P. Kilcoyne, Editor(s)

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