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Proceedings Paper

High-power single-lateral-mode diode lasers
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Paper Abstract

Novel waveguide structures are presented that facilitate high power, single lateral mode output in narrow stripe semiconductor lasers. Flared tapered waveguide lasers, fabricated by a metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE), are shown to attain output powers of 650mW with stable single lateral mode beam properties. Novel integrated mode filters, which induce mode selective lateral radiation loss via curvature, or frustration of the index guide, are shown to increase the threshold for the 1st order mode to prevent it from attaining threshold. The addition these unique mode filters, which do not increase the fabrication complexity, extends the range of single lateral mode operation in narrow stripe devices.

Paper Details

Date Published: 19 June 2003
PDF: 8 pages
Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); doi: 10.1117/12.482630
Show Author Affiliations
Reuel B. Swint, Univ. of Illinois/Urbana-Champaign (United States)
Terence S. Yeoh, Univ. of Illinois/Urbana-Champaign (United States)
Victor C. Elarde, Univ. of Illinois/Urbana-Champaign (United States)
Mark S. Zediker, Nuvonyx, Inc. (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 4973:
High-Power Diode Laser Technology and Applications
Mark S. Zediker, Editor(s)

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