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Proceedings Paper

Optical gain in wide-bandgap group-III nitrides
Author(s): Andreas Hangleiter
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Paper Abstract

Understanding the mechanisms of optical gain in a semiconductor laser material is the key issue towards minimizing the threshold current density. For nitride-based laser structures, there has been a lively debate as to the role of fluctuations, polarization fields, and many-body effects in todays GalnN/GaN/AlGaN laser structures.

A thorough understanding of the fundamental materials properties forms the basis of any further consideration. We will then review the basic models, the theoretical approaches, and the available experimental evidence supporting the competing views of optical gain in the nitrides. The properties of guided optical modes in nitride waveguides will play an important role. A critical discussion of those results will finally allow us to discuss ultimate performance limits for laser diodes.

Paper Details

Date Published: 28 August 2002
PDF: 29 pages
Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030A (28 August 2002); doi: 10.1117/12.482625
Show Author Affiliations
Andreas Hangleiter, Technische Univ. Braunschweig (Germany)


Published in SPIE Proceedings Vol. 10303:
Gallium-Nitride-based Technologies: A Critical Review
Marek Osinski, Editor(s)

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