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Proceedings Paper

Advanced processing of group-III nitrides
Author(s): S. J. Pearton; Fan Ren; B. P. Gila; Cammy R. Abernathy
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Paper Abstract

Recent advances in developing process modules for GaN photonic and power electronic devices are reviewed. These processes include damage removal in dry etched n- and p- GaN, implant doping and isolation, novel gate dielectrics, improved Schottky and ohmic contacts.

Paper Details

Date Published: 28 August 2002
PDF: 25 pages
Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030308 (28 August 2002); doi: 10.1117/12.482624
Show Author Affiliations
S. J. Pearton, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
B. P. Gila, Univ. of Florida (United States)
Cammy R. Abernathy, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 10303:
Gallium-Nitride-based Technologies: A Critical Review
Marek Osinski, Editor(s)

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