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Proceedings Paper

Optoelectronic devices built on bulk GaN substrates
Author(s): P. Perlin; I. Grzegory; M. Leszczynski; P. Prystawko; R. Czernecki; G. Nowak; P. Wisniewski; L. Dmowski; H. Teisseyre; E. Litwin-Staszewska; T. Suski; M. Bockowski; B. Lucznik; G. Franssen; S. Porowski
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Paper Abstract

In this paper we discuss the applicability of high-pressure grown bulk GaN crystals as substrates for device oriented MOVPE homoepitaxy. First, we fabricated light emitting diodes as a step towards realization of our target device: a blue light emitting laser diode. Our homoepitaxialy grown LEDs are characterized by excellent electrical characteristics and very satisfactory optical properties. Building on the experience gained during this first stage of our research we have been able to fabricate pulse current operated laser diodes emitting light at a wavelength between 397 and 430 nm. We believe that this fast progress clearly demonstrates the usefulness of bulk GaN substrates for optoelectronic devices, especially for high power laser diodes.

Paper Details

Date Published: 28 August 2002
PDF: 11 pages
Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030306 (28 August 2002); doi: 10.1117/12.482622
Show Author Affiliations
P. Perlin, UNIPRESS (Poland)
I. Grzegory, UNIPRESS (Poland)
M. Leszczynski, UNIPRESS (Poland)
P. Prystawko, UNIPRESS (Poland)
R. Czernecki, UNIPRESS (Poland)
G. Nowak, UNIPRESS (Poland)
P. Wisniewski, UNIPRESS (Poland)
L. Dmowski, UNIPRESS (Poland)
H. Teisseyre, UNIPRESS (Poland)
E. Litwin-Staszewska, UNIPRESS (Poland)
T. Suski, UNIPRESS (Poland)
M. Bockowski, UNIPRESS (Poland)
B. Lucznik, UNIPRESS (Poland)
G. Franssen, UNIPRESS (Poland)
S. Porowski, UNIPRESS (Poland)


Published in SPIE Proceedings Vol. 10303:
Gallium-Nitride-based Technologies: A Critical Review
Marek Osinski, Editor(s)

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