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Proceedings Paper

Back-illuminated solar-blind AlxGa1-xN p-i-n photodiodes
Author(s): J. C. Campbell; Chris J. Collins; M. M. Wong; U. Chowdhury; Russell D. Dupuis
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Paper Abstract

In the past few years, the wide-bandgap III-N compound semiconductor materials have been the subject of intense research owing to their commercial importance for the production of high-brightness light-emitting diodes. Another potentially important application for the Column III nitrides is for detection of ultra-violet radiation for various sensing, monitoring, and control applications. There has been a growing interest in back-illuminated solar-blind AlxGa1-xN photodiodes for flip-chip mounting to silicon read-out circuits. These devices not only need to have high external quantum efficiencies, but these efficiencies must be achieved at, or less than, the operating voltage of the readout display. This paper describes AlxGa1-xN heteroepitaxial back-illuminated p-i-n photodiodes that have been developed for these applications.

Paper Details

Date Published: 28 August 2002
PDF: 10 pages
Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030G (28 August 2002); doi: 10.1117/12.482619
Show Author Affiliations
J. C. Campbell, Univ. of Texas at Austin (United States)
Chris J. Collins, Univ. of Texas at Austin (United States)
M. M. Wong, Univ. of Texas at Austin (United States)
U. Chowdhury, Univ. of Texas at Austin (United States)
Russell D. Dupuis, Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 10303:
Gallium-Nitride-based Technologies: A Critical Review
Marek Osinski, Editor(s)

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