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Proceedings Paper

Electronic structure of nitrogen-doped GaAs and GaP
Author(s): Angelo J. Mascarenhas; Yong Zhang
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Paper Details

Date Published: 29 August 2002
Hard Copy: 19 pages
Proc. SPIE CR83, Gallium-Nitride-based Technologies, (29 August 2002);
Show Author Affiliations
Angelo J. Mascarenhas, National Renewable Energy Lab. (United States)
Yong Zhang, National Renewable Energy Lab. (United States)

Published in SPIE Proceedings Vol. CR83:
Gallium-Nitride-based Technologies
Marek Osinski, Editor(s)

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