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Proceedings Paper

Modeling effects of laser beam shaping for projection laser crystallization
Author(s): Hidayat Kisdarjono; Apostolos T. Voutsas; Rajendra Solanki
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Paper Abstract

A model for projection laser crystallization of thin silicon films has been developed. The model is capable of simulating stochastic nucleation and grain growth to predict the extent of lateral growth (LG) in the film and the details of the final microstructure. This model was used to simulate irradiation schemes involving multiple pulses, designed to increase the lateral growth length (LGL) in the irradiated domain. For an irradiation scheme involving two pulses, with an adjustable time delay, our simulation predicted a maximum increase in LGL of about 50% (from 2μm to 3μm) with a maximum film temperature of ~2700 K. For a three-pulse irradiation scheme (without time delay) a 50% increase in LGL was also predicted, but with a maximum film temperature of ~2200 K. These simulations show the efficacy and the relative merit of each of the examined schemes, as well as, their associated process window.

Paper Details

Date Published: 16 May 2003
PDF: 10 pages
Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); doi: 10.1117/12.482590
Show Author Affiliations
Hidayat Kisdarjono, Oregon Health and Sciences Univ. (United States)
Apostolos T. Voutsas, Sharp Labs. of America (United States)
Rajendra Solanki, Oregon Health and Sciences Univ. (United States)


Published in SPIE Proceedings Vol. 5004:
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Apostolos T. Voutsas, Editor(s)

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