Share Email Print
cover

Proceedings Paper

N-shot SLS-processed polycrystalline silicon TFTs
Author(s): Mark A. Crowder; M. Moriguchi; Y. Mitani; Apostolos T. Voutsas
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, we focus on a variation of the 2-shot sequential lateral solidification (SLS) process for crystallization of thin Si films for TFT applications. The resulting microstructure is engineered to reduce the large discrepancy in directionality of the TFTs with respect to the lateral growth direction. Through this method, we are able to improve the mobility directionality ratio between devices with majority carrier flow parallel and perpendicular to the lateral growth direction, respectively, from 0.3 to over 0.7. Further post-SLS process thinning and planarization of the Si surface is used to improve the uniformity of device characteristics.

Paper Details

Date Published: 16 May 2003
PDF: 8 pages
Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); doi: 10.1117/12.482589
Show Author Affiliations
Mark A. Crowder, Sharp Labs. of America (United States)
M. Moriguchi, Sharp Labs. of America (United States)
Y. Mitani, Sharp Labs. of America (United States)
Apostolos T. Voutsas, Sharp Labs. of America (United States)


Published in SPIE Proceedings Vol. 5004:
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Apostolos T. Voutsas, Editor(s)

© SPIE. Terms of Use
Back to Top