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Proceedings Paper

High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing
Author(s): Hiroaki Jiroku; Mitsutoshi Miyasaka; Satoshi Inoue; Yoshifumi Tsunekawa; Tatsuya Shimoda
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Paper Abstract

Polycrystalline silicon (p-Si) thin film transistors (TFTs) were fabricated using a high temperature process that included solid phase crystallization (SPC) and dry thermal oxidation with excimer laser annealing (ELA). Raman spectroscopy, X-ray diffraction and transmission electron microscopy analyses showed that the ELA process improved the quality of p-Si films markedly. The p-Si TFTs exhibited higher performance than the SPC p-Si TFTs. The field effect mobility for n-type self-aligned TFT was (formula available in paper). The longitudinal junction diffusion length of the p-Si TFTs was shorter than that of the SPC p-Si TFTs. This is favorable for fine design rules. If optimization of amorphous silicon (a-Si) deposition and SPC conditions enables the grains of p-Si films to grow larger than the channel length and the positions of the grain boundaries are controlled, this process will produce great scaling rule merits such as single-grain Si TFTs. This fabrication process is consistent with the high temperature p-Si TFT development trend towards using large substrates, low temperatures, and fine design rules. High temperature p-Si TFTs are expected to be used in LSI circuits as silicon-on-insulator (SOI) devices in the future.

Paper Details

Date Published: 16 May 2003
PDF: 8 pages
Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); doi: 10.1117/12.482584
Show Author Affiliations
Hiroaki Jiroku, Seiko Epson Corp. (Japan)
Mitsutoshi Miyasaka, Seiko Epson Corp. (Japan)
Satoshi Inoue, Seiko Epson Corp. (Japan)
Yoshifumi Tsunekawa, Seiko Epson Corp. (Japan)
Tatsuya Shimoda, Seiko Epson Corp. (Japan)


Published in SPIE Proceedings Vol. 5004:
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Apostolos T. Voutsas, Editor(s)

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