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Proceedings Paper

Property of single-crystalline Si TFTs fabricated with u-Czochralski (grain filter) process
Author(s): Ryoichi Ishihara; Paul Ch. van der Wilt; Barry D. van Dijk; J. W. Metselaar; C. I. M. Beenakker
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Paper Abstract

Formation of TFTs inside location-controlled large Si grains with a low temperature process is an attractive approach for realizing system-circuit integration with displays on a large glass substrate. Local structural variations of the substrate using photolithography allows an accurate location-control of the large Si grains in excimer-laser crystallization. Single-crystalline Si (c-Si) TFTs was formed inside a location-controlled large (6 μm) grain by μ-Czochraski process of a-Si film. The c-Si TFTs showed field effect mobility of 450 cm2/Vs on average. Crystallization characteristics, spread of the TFT characteristics and effects of process parameters will be reviewed and discussed.

Paper Details

Date Published: 16 May 2003
PDF: 10 pages
Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); doi: 10.1117/12.482582
Show Author Affiliations
Ryoichi Ishihara, Technische Univ. Delft (Netherlands)
Paul Ch. van der Wilt, Technische Univ. Delft (Netherlands)
Barry D. van Dijk, Technische Univ. Delft (Netherlands)
J. W. Metselaar, Technische Univ. Delft (Netherlands)
C. I. M. Beenakker, Technische Univ. Delft (Netherlands)


Published in SPIE Proceedings Vol. 5004:
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Apostolos T. Voutsas, Editor(s)

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