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Proceedings Paper

Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties
Author(s): Heedon Hwang; Kwangmin Park; Sukho Yoon; Euijoon Yoon; Hyeonsik M. Cheong; Young Dong Kim
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Paper Abstract

InAs/InP self-assembled quantum dots (SAQDs) are promising active layers for optical devices for fiber-optic communication. Furthermore, they may be used for the fabrication of uncooled mid and far infrared detectors. InAs/InP SAQDs were grown by low pressure-metalorganic chemical vapor deposition, where As/P exchange reaction and growth interruption step play an important role. The InAs quantum dot (QD) stacks were successfully grown on (001) InP substrate and their optical properties were characterized. Far-infrared absorption peaks were observed at 819 cm-1 (12.20 μm) and 518 cm-1 (19.35 μm) at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm-1 was attributed to a plasmon related peak in the n-type InP substrate. On the other hand, the absorption peak at 518 cm-1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot infrared photodetectors (QDIPs) can be fabricated. In situ monitoring of the QD evolution and stacking sequences were also discussed.

Paper Details

Date Published: 1 July 2003
PDF: 9 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.482480
Show Author Affiliations
Heedon Hwang, Seoul National Univ. (South Korea)
Kwangmin Park, Seoul National Univ. (South Korea)
Sukho Yoon, Seoul National Univ. (South Korea)
Euijoon Yoon, Seoul National Univ. (South Korea)
Hyeonsik M. Cheong, Sogang Univ. (South Korea)
Young Dong Kim, Kyunghee Univ. (South Korea)

Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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