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Proceedings Paper

New III-V-based magnetic semiconductors and their optical and magnetic properties
Author(s): Hajime Asahi; Y. K. Zhou; Mamoru Hashimoto; R. Asano; Hiroyuki Tanaka
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Paper Abstract

II-V-based magnetic semiconductors are gathering great interest because of their potential utility as new functional materials that are expected to lead to the introduction of spin degree-of-freedom for semiconductor devices. New magnetic semiconductor heterostructure, InMnAsSb/InSb, was proposed and grown by low temperature molecular beam epitaxy (MBE). Mid-infrared (2-6 μm) light-induced ferromagnetism was observed at temperatures lower than 40-50K and this light-induced magnetization remained even after the stop of light irradiation. Observed characteristics are applicable to the mid-infrared sensor/memory devices. New magnetic semiconductor GaCrN layers were grown by electron-cyclotron-resonance (ECR) plasma-assisted MBE and the ferromagnetic characteristics were observed at 7-400K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field (M-H) curves at all measuring temperatures. We also observed the photoluminescence (PL) emission from GaCrN layers. Applications to the novel devices controlling charges (electrons and holes), spins and photons are expected.

Paper Details

Date Published: 1 July 2003
PDF: 8 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.482476
Show Author Affiliations
Hajime Asahi, Osaka Univ. (Japan)
Y. K. Zhou, Osaka Univ. (Japan)
Mamoru Hashimoto, Osaka Univ. (Japan)
R. Asano, Osaka Univ. (Japan)
Hiroyuki Tanaka, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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