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Proceedings Paper

Compact electron-based extreme-ultraviolet source at 13.5 nm
Author(s): Andre Egbert; Bjoern Mader; Boris Tkachenko; Andreas Ostendorf; Boris N. Chichkov; Thomas Missalla; Max Christian Schuermann; Kai Gaebel; Guido Schriever; Uwe Stamm
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Paper Abstract

Generation of extreme ultraviolet (EUV) radiation from solid targets is studied and a compact EUV source for small-scale lithographic applications and EUV metrology is development. This source is based on a transfer of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a tungesten filament and accelerated in a high-voltage electric field towards a solid target. In the demonstrated "EUV tube" beryllium and silicon targets are used to generate radiation at 11.4 nm and 13.5 nm, respectively. The absolute converstion efficiencies into EUV photons are measured. At 13.5 nm an EUV power of 34μW or 2×1012 photon/s (in 2% bandwidth and a solid angle of 2π sr) is demonstrated. Prospects for a further power scaling of the EUV source are discussed.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.482366
Show Author Affiliations
Andre Egbert, Laser Zentrum Hannover e.V. (Germany)
Bjoern Mader, Laser Zentrum Hannover e.V. (Germany)
Boris Tkachenko, Laser Zentrum Hannover e.V. (Germany)
Andreas Ostendorf, Laser Zentrum Hannover e.V. (Germany)
Boris N. Chichkov, Laser Zentrum Hannover e.V. (Germany)
Thomas Missalla, JENOPTIK Mikrotechnik GmbH (Germany)
Max Christian Schuermann, JENOPTIK Mikrotechnik GmbH (Germany)
Kai Gaebel, XTREME Technologies GmbH (Germany)
Guido Schriever, XTREME Technologies GmbH (Germany)
Uwe Stamm, XTREME Technologies GmbH (Germany)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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