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Proceedings Paper

Mix and match capability of e-beam direct-write for the 65-nm technology
Author(s): Yves Laplanche; Murielle Charpin; Laurent Pain; J. Todeschini; Daniel Henry; Pierre-Olivier Sassoulas; S. Gough; Ulf Weidenmueller; Peter Hahmann
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Paper Abstract

An easy way to pattern 65nm CD target, when optical lithography technology is not available, is to use an Electron Beam Direct Write tool (EBDW), which is well known for its high resolution patterning potentials, with the drawback of a very low throughput. Emerging techniques of electron projection lithography also propose the same patterning capability with enhanced throughput. One of the most crucial issues, when dealing with integration, is the overlay capability of the systems. This paper exposes the studies made on the overlay capability issue of the LEICA EBDW installed in STMicroelectronics (STM) production plant in Crolles (France) and proves our tool is ready to support the 65nm node technology development.

Paper Details

Date Published: 16 June 2003
PDF: 11 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.482342
Show Author Affiliations
Yves Laplanche, STMicroelectronics (France)
Murielle Charpin, CEA-LETI (France)
Laurent Pain, CEA-LETI (France)
J. Todeschini, Philips Semiconductors (France)
Daniel Henry, STMicroelectronics (France)
Pierre-Olivier Sassoulas, STMicroelectronics (France)
S. Gough, STMicroelectronics (France)
Ulf Weidenmueller, Leica Microsystems Lithography GmbH (Germany)
Peter Hahmann, Leica Microsystems Lithography GmbH (Germany)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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