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Proceedings Paper

Advanced patterning studies using shaped e-beam lithography for 65-nm CMOS preproduction
Author(s): Laurent Pain; Murielle Charpin; Yves Laplanche; David Herisson; J. Todeschini; Ramiro Palla; A. Beverina; H. Leininger; S. Tourniol; M. Broekaart; Emmanuelle Luce; F. Judong; K. Brosselin; Y. Le Friec; F. Leverd; S. Del Medico; V. De Jonghe; Daniel Henry; M. P. Woo; F. Arnaud
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Paper Abstract

With the objective to ramp-up 65 nm CMOS production in early 2005, preliminary works have to start today to develop the basic technological in order to be correctly prepared. In the absence of commercial advanced 193 nm scanners compatible with these aggressive design rules, electron beam technology was employed for the realization of a first 6-T SRAM cell of a size of 0.69 μm2. This paper highlights the work performed to integrate E-beam lithography in this first 65 nm CMOS process flow.

Paper Details

Date Published: 16 June 2003
PDF: 12 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.482336
Show Author Affiliations
Laurent Pain, CEA-LETI (France)
Murielle Charpin, CEA-LETI (France)
Yves Laplanche, STMicroelectronics (France)
David Herisson, STMicroelectronics (France)
J. Todeschini, Philips Semiconductors (France)
Ramiro Palla, STMicroelectronics (France)
A. Beverina, STMicroelectronics (France)
H. Leininger, STMicroelectronics (France)
S. Tourniol, STMicroelectronics (France)
M. Broekaart, Philips Semiconductors (France)
Emmanuelle Luce, STMicroelectronics (France)
F. Judong, STMicroelectronics (France)
K. Brosselin, STMicroelectronics (France)
Y. Le Friec, STMicroelectronics (France)
F. Leverd, STMicroelectronics (France)
S. Del Medico, STMicroelectronics (France)
V. De Jonghe, Philips Semiconductors (France)
Daniel Henry, STMicroelectronics (France)
M. P. Woo, Motorola (France)
F. Arnaud, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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