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Proceedings Paper

High-speed tunnel injection InGaAs/GaAs quantum dot lasers
Author(s): Pallab Bhattacharya; S. Ghosh
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Paper Abstract

The design, growth, and steady-state and small-signal modulation characteristics of high-speed tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers are described and discussed. The measured small-signal modulation bandwidth for I/Ith ~ 3.2 is f-3dB = 22GHz and the gain compression factor for this frequency response is ε = 7.2s10-16 cm3. The differential gain obtained from the modulation data is dg/dn ≈ 8.85x10-14 cm2 at room temperature. The value of the K-factor is 0.171ns and the maximum intrinsic modulation bandwidth is 55GHz. The measured high speed data are comparable to, or better than, equivalent quantum well lasers for the first time.

Paper Details

Date Published: 25 July 2003
PDF: 10 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.482327
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
S. Ghosh, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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