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Proceedings Paper

Multishell photoluminescence from InAs/InGaAs quantum dots
Author(s): Petr Georgievich Eliseev; Kevin J. Malloy; Andreas Stintz; T. V. Torchynska; H. M. Alfaro Lopez; R. Pena Sierra
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Paper Abstract

Photoluminescence spectra are investigated of InAs/InGaAs QD structures prepared be MBE on GaAs substrates in a range of pumping power density up to 0.6 kW/cm2. Multiple spectra band are observed corresponding to electron shells in atom-like dots. Identification of shells is proposed on the basis of spherical oscillator model. Energy diagram of dots is proposed taking into account identical temperature dependence of PL intensity in three lowest spectral bands.

Paper Details

Date Published: 25 July 2003
PDF: 8 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.482322
Show Author Affiliations
Petr Georgievich Eliseev, Univ. of New Mexico (United States)
Kevin J. Malloy, Univ. of New Mexico (United States)
Andreas Stintz, Univ. of New Mexico (United States)
T. V. Torchynska, National Polytechnic Institute (Mexico)
H. M. Alfaro Lopez, National Polytechnic Institute (Mexico)
R. Pena Sierra, National Polytechnic Institute (Mexico)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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