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Proceedings Paper

Circuit modeling approach for quantum-structured total internal reflection electro-optic switch and fabric
Author(s): Rangaswany Nakkeeran; T. G. Palanivelu; Pantony Gnanaraj
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Paper Abstract

Ultra high-speed optical switches (< 10 ns) are more important in optical networks and optical computers. This paper analyzes the switching speed and insertion loss of (2 x 2) Total Internal Reflection (TIR) electro — optic switch in Multiple Quantum Well (MQW) and Quantum Dot (QD) structures using equivalent circuit model approach. Then extended to analyze the switching speed and insertion loss of switch fabric (Spanke Architecture). For the purpose of this study, AlGaAs/ GaA° multiple quantum well stmcture of length 150 micrometer and width of 40 micrometer and InAs quantum dot of 100 K diameter are considered. This work is carried out with SABER Sketch (ver.4.2.3) package. It is found that the obtained switching speed of both quantum dot switch and fabric are improved by a factor of 1000 (from the order of nano seconds to femto seconds) and insertion loss reduced by a factor of 1000 (from the order of dBm to dBµ) while comparing to quantum well switch and fabric. Also noticed that the operating speed of the switch fabric is relatively oscillatory when the number of switch fabric stage is less than four.

Paper Details

Date Published: 3 September 2002
PDF: 12 pages
Proc. SPIE 4907, Optical Switching and Optical Interconnection II, (3 September 2002); doi: 10.1117/12.482256
Show Author Affiliations
Rangaswany Nakkeeran, Pondicherry Engineering College (India)
T. G. Palanivelu, Pondicherry Engineering College (India)
Pantony Gnanaraj, Pondicherry Engineering College (India)

Published in SPIE Proceedings Vol. 4907:
Optical Switching and Optical Interconnection II
Lih-Yuan Lin; Yimo Zhang; Kimio Oguchi, Editor(s)

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