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Proceedings Paper

Ultraviolet laser properties of diamond films by CVD
Author(s): Wanlu Wang; Kejun Liao; Yabo Zhu; Y. Li; Y. Ma
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Paper Abstract

The ultraviolet light emission from diamond films was investigated. The diamond films on Si (100) were deposited by microwave plasma chemical vapor deposition. The B-doped and P-doped layers were formed by cold ion implantation. The properties of p-type and n-type layers were characterized by SEM, SIMS, Raman spectroscopy and Hall measurements. The experimental results showed that a sharp emission peak at 235nm was observed at 22V for 9niA at room temperature. A broad A-band emission in the visible region was also appeared simultaneously. The intensity of ultraviolet emission was changed with carrier mobility and temperature. The results obtained have discussed in detail.

Paper Details

Date Published: 5 September 2002
PDF: 6 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482249
Show Author Affiliations
Wanlu Wang, Chongqing Univ. and Education Ministry of China (China)
Kejun Liao, Chongqing Univ. (China)
Yabo Zhu, Chongqing Univ. (China)
Y. Li, Chongqing Univ. (China)
Y. Ma, Chongqing Univ. (China)


Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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