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Proceedings Paper

Influence of confined layer on characteristics of current density and carrier diffusion in VCSEL
Author(s): XiaoFeng Duan; Chu Zhang; Bing Zhou; Chunmei Xu
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Paper Abstract

Injected-current density and carrier distribution are crucially important factors in Vertical-cavity surface-emitting laser (VCSEL) characteristics, affecting the laser emission wavelength, distribution of transverse-mode, threshold voltage, available output power and operating laser lifetime. Using a method of finding self-consistent solution for the carrier-diffusion and Poisson's equations, of calculating beginning from electrode voltage and of taking into account the whole structure of distributed Bragg reflectors (DBR), we have studied the two-dimensional current density and carrier distribution characteristics of VCSEL. The calculated results show that the injected-current density and carrier distribution determined by the confined-layer depth in VCSEL. The deeper confined-layer in VCSEL is, the more notable current density and carrier distribution are limited in the active region. So the strong confinement benefits to concentrate the current density in the active region to a higher level, at the same time ofthe reduction ofthe threshold.

Paper Details

Date Published: 5 September 2002
PDF: 5 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482230
Show Author Affiliations
XiaoFeng Duan, Ordnance Engineering College (China)
Chu Zhang, Ordnance Engineering College (China)
Bing Zhou, Ordnance Engineering College (China)
Chunmei Xu, Ordnance Engineering College (China)

Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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