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Proceedings Paper

Growth of zinc oxide thin films on Si (400) by plasma-assisted molecular beam epitaxy
Author(s): Hongwei Liang; Youming Lu; De Zen Shen; Yichun Liu; B. H. Li; J. Y. Zhang; Xiwu Fan
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Paper Abstract

ZnO thin films have been grown on a (400) Si substrate by plasma-molecular beam epitaxy (P-MBE). The sample was characterized by X-ray diffraction (XRD) and photoluminescence (PL). X-ray diffraction result exhibits a strong (002) diffraction peak of ZnO thin film. In PL spectra, a dominant ultraviolet light (UL) emission at 3.265eV is observed at room temperature (RT). According to the energy position of the UL emission, this luminescence at RT was considered to be related to exciton recombination. The samples were annealed in oxygen for two hours at different temperatures, XRD shows the improvement of crystal quality with increasing annealing temperature.

Paper Details

Date Published: 5 September 2002
PDF: 4 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482228
Show Author Affiliations
Hongwei Liang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Youming Lu, Changchun Institute of Optics, Fine Mechanics and (China)
De Zen Shen, Changchun Institute of Optics, Fine Mechanics and (China)
Yichun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
B. H. Li, Changchun Institute of Optics, Fine Mechanics and (China)
J. Y. Zhang, Changchun Institute of Optics, Fine Mechanics and (China)
Xiwu Fan, Changchun Institute of Optics, Fine Mechanics and (China)


Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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