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Proceedings Paper

Spontaneous emission factor in planar microcavity lasers with distributed mirrors
Author(s): Hongdong Zhao; Meng Cao; Zhi-long Kuang; Xiao-guang Zhu; Yimo Zhang
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Paper Abstract

A method of the analysis of spontaneous emission factor have been showed for a planar micro-cavity laser with distributed mirrors based on spectra and half angle at far field full-width half maximum of the lasing mode. After the spontaneous emission radiation patters for a dipole in the micro-cavity is calculated, a considerable value of spontaneous emission factor 0.1 is presented. Then the band filling in the semiconductor and the vacuum field in the micro-cavity are studied together, the spontaneous emission spectrum for a quantum well micro-cavity is described. The maximum scaling of spontaneous emission factor in the practical micro-cavity laser is 3.2*10-3 in the quantum well micro-cavity. The difference spontaneous emission between a dipole micro-cavity with a quantum well micro-cavity is discussed.

Paper Details

Date Published: 5 September 2002
PDF: 5 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482223
Show Author Affiliations
Hongdong Zhao, Hebei Univ. of Technology (China)
Meng Cao, Hebei Univ. of Technology (China)
Zhi-long Kuang, Hebei Univ. of Technology (China)
Xiao-guang Zhu, Hebei Univ. of Technology (China)
Yimo Zhang, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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