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Proceedings Paper

Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple extra-cavity
Author(s): Feng Wang; Andreas Hermerschmidt; Hans Joachim Eichler
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Paper Abstract

Using an extra-cavity consisting of an etalon and a mirror, dual-wavelength operation of a high-power broad-area multi-stripe diode laser is achieved. The reflection of the etalon acts as the output of the whole system. The free-running bandwidth of the laser diode is about 2.0 nm. At dual-wavelength operation, the bandwidth of each wavelength component is narrowed to about 0.07 nm, and the space is 1 .65 nm, the same as the FSR of the etalon. We obtain an available dual-wavelength output power of 2.0 W at the drive current of 6.5 A. The power ratio of the components at two different wavelengths can be changed by changing the temperature of the diode laser. To tune the wavelength of the dual-wavelength output, one can changing the temperature of the laser diode and the tilt angle of the etalon simultaneously.

Paper Details

Date Published: 5 September 2002
PDF: 4 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482217
Show Author Affiliations
Feng Wang, Lingyun Photoelectronic System Co. Ltd. (China)
Andreas Hermerschmidt, Technische Univ. Berlin (Germany)
Hans Joachim Eichler, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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