Share Email Print

Proceedings Paper

Growth and characterization of AlGaN/GaN superlattices
Author(s): Wenping Guo; Hui Hu; Xiaoying Zhou; Tong Wu; Changzheng Sun; Yi Luo
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

(A1)GaN semiconductors have many important applications in high temperature, high power and high frequency electronic devices such as HEMT and HBT, as well as in blue laser diodes, UV LEDs and detectors. In this work, AIGaN/GaN superlattices have been grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) and characterized by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and photoluminescence (PL). The HRXRD measurements show that the crack-free epi-layer grown at optimized condition has very flat interface and good crystal quality. The AFM data also affirmed the HRXRD results with a root-mean-square roughness as low as 0.3 nm. The possible origin has also been proposed for the two peaks observed in the PL spectrum of Mg-doped A1GaN/GaN superlattices.

Paper Details

Date Published: 5 September 2002
PDF: 4 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482214
Show Author Affiliations
Wenping Guo, Tsinghua Univ. (China)
Hui Hu, Tsinghua Univ. (China)
Xiaoying Zhou, Tsinghua Univ. (China)
Tong Wu, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

© SPIE. Terms of Use
Back to Top