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Proceedings Paper

Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells
Author(s): Yen-Sheng Lin; Kung-Jen Ma; Yi-Yin Chung; Chih-Wen Liu; Shih-Wei Feng; Yung-Chen Cheng; Chih Chung Yang; Cheng-Ta Kuo; Jian-Shihn Tsang
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Paper Abstract

It is shown that post-growth thermal annealing of such a sample with temperature ranging from 800 to 900 °C led to a better confinement of indium rich clusters near InGaN quantum well layers. Transmission electron microcopy (TEM) and energy filter TEM results manifested that the sizes of indium-rich QDs were reduced with increasing annealing temperature. Also, the size homogeneity was improved. Quasi-regular arrays of indium-rich QDs embedded in InGaN quantum wells were observed in the sample of 900 °C annealing. X-ray diffraction also showed the enhancement of InN relative intensity. Photoluminescence measurements revealed blue shifts of photon emission spectral peak, indicating stronger quantum confinement after thermal annealing.

Paper Details

Date Published: 5 September 2002
PDF: 4 pages
Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); doi: 10.1117/12.482212
Show Author Affiliations
Yen-Sheng Lin, Chinese Naval Academy (Taiwan)
Kung-Jen Ma, Chung Hua Univ. (Taiwan)
Yi-Yin Chung, National Taiwan Univ. (Taiwan)
Chih-Wen Liu, National Taiwan Univ. (Taiwan)
Shih-Wei Feng, National Taiwan Univ. (Taiwan)
Yung-Chen Cheng, National Taiwan Univ. (Taiwan)
Chih Chung Yang, National Taiwan Univ. (Taiwan)
Cheng-Ta Kuo, Advanced Epitaxy Technology Inc. (Taiwan)
Jian-Shihn Tsang, Advanced Epitaxy Technology Inc. (Taiwan)


Published in SPIE Proceedings Vol. 4913:
Semiconductor Lasers and Applications
Yi Luo; Yoshiaki Nakano, Editor(s)

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