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Proceedings Paper

Applications of high-power laser technology to wide-bandgap nitride semiconductor processing
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Paper Abstract

Laser annealing, laser surface processing and laser lift-off procedure are reviewed as applied to semiconductor nitride- based structures (GaN films and InGaN/GaN optoelectronic device structures grown on sapphire substrates). Data on laser ablation of composite GaN/sapphire material are reviewed with more detailed consideration of the ablation rate under subpicosecond laser pulses and under long-pulse irradiation in the IR range (wavelengths of 5.0-5.8 and 9.6 micrometers ).

Paper Details

Date Published: 13 September 2002
PDF: 13 pages
Proc. SPIE 4760, High-Power Laser Ablation IV, (13 September 2002); doi: 10.1117/12.482082
Show Author Affiliations
Petr Georgievich Eliseev, CHTM/Univ. of New Mexico (USA) and P.N. Lebedev Physical Institute (Russia) (United States)
Andrei A. Ionin, P.N. Lebedev Physical Institute (Russia)
Yurii M. Klimachev, P.N. Lebedev Physical Institute (Russia)
Dmitrii V. Sinitsyn, P.N. Lebedev Physical Institute (Russia)
Jinhyun Lee, CHTM/Univ. of New Mexico (United States)
Marek Osinski, CHTM/Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 4760:
High-Power Laser Ablation IV
Claude R. Phipps, Editor(s)

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