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Proceedings Paper

Hot carrier photoeffects in inhomogeneous semiconductors and their applications to light detectors
Author(s): Larisa P. Amosova; I. Ya. Marmur; Ya. A. Oksman; S. Ashmontas; Jonas Gradauskas; Edmundas Sirmulis
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Paper Abstract

The heating of free carriers by the infrared (IR) radiation or electric field increases the average energy of the carriers. This constitutes the physical basis for the observed photovoltage in semiconductor contact structures. In the present review the experiments carried out in recent years with semiconductor diodes and transistors are described. This allows the main properties of internal photoemission, photocapacity effect, and secondary carrier injection to be determined.

Paper Details

Date Published: 1 December 1991
PDF: 8 pages
Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48178
Show Author Affiliations
Larisa P. Amosova, S.I. Vavilov State Optical Institute (Russia)
I. Ya. Marmur, S.I. Vavilov State Optical Institute (Russia)
Ya. A. Oksman, S.I. Vavilov State Optical Institute (Russia)
S. Ashmontas, Institute of Semiconductor Physics (Lithuania)
Jonas Gradauskas
Edmundas Sirmulis, Institute of Physics (Lithuania)

Published in SPIE Proceedings Vol. 1440:
Optical Radiation Interaction with Matter
Alexey M. Bonch-Bruevich; Vitali I. Konov; Mikhail N. Libenson, Editor(s)

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