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Proceedings Paper

Optical properties of vertically stacked self-assembled InAs quantum dots in Al0.5Ga0.5As barriers
Author(s): Shuwei Li; Guoqing Miao; Hong Jiang; Guang Yuan; Hang Song; Yixin Jin; Kazuto Koike
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Paper Abstract

Vertically stacked QD growth in precision can be incorporated to develop new structures and improve the size and spatial distribution ofthe strain-induced QD ensemble. Photoluminescence (PL) ofquantum dots embedded in high potential barriers is studied as functions ofbarrier thickness, temperature, and laser excitation power. With the increase of un-doped barrier thickness, both of strengthened two-dimensional electron gas (2DEG) structure and strongly localized electron wave functions can increase the carrier recombination. The optical properties of different-barrier-thickness samples exhibit different characteristics with the decreased measurement temperatures. The PL recombination characteristic of the samples with the barriers adjacent to a Si-doping GaAs layer is different from that of samples with barrier adjacent to an i-GaAs layer.

Paper Details

Date Published: 5 September 2002
PDF: 7 pages
Proc. SPIE 4923, Nano-Optics and Nano-Structures, (5 September 2002); doi: 10.1117/12.481710
Show Author Affiliations
Shuwei Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Guoqing Miao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Hong Jiang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Guang Yuan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Hang Song, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yixin Jin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Kazuto Koike, Osaka Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4923:
Nano-Optics and Nano-Structures
Xing Zhu; Stephen Y. Chou; Yasuhiko Arakawa, Editor(s)

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