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Proceedings Paper

Double-resonant tunneling via surface plasmons in a metal-semiconductor system
Author(s): Olga M. Sreseli; Ludvig V. Belyakov; D. N. Goryachev; B. L. Rumyantsev; Ilya D. Yaroshetskii
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Paper Abstract

The electromagnetic field distribution in the corrugated-metal semiconductor system was computed. When the reciprocal grating vector equals the difference of wave vectors of the surface modes at the two interfaces of the metal film, the effective resonant tunneling of the electromagnetic field through the metal film is possible. Used as selective photodetectors or light emitting devices, this may substantially increase the efficiency of the mentioned structures.

Paper Details

Date Published: 1 December 1991
PDF: 6 pages
Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48165
Show Author Affiliations
Olga M. Sreseli, A.F. Ioffe Physico-Technical Institute (Russia)
Ludvig V. Belyakov, A.F. Ioffe Physico-Technical Institute (Russia)
D. N. Goryachev, A.F. Ioffe Physico-Technical Institute (Russia)
B. L. Rumyantsev, A.F. Ioffe Physico-Technical Institute (Russia)
Ilya D. Yaroshetskii, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1440:
Optical Radiation Interaction with Matter
Alexey M. Bonch-Bruevich; Vitali I. Konov; Mikhail N. Libenson, Editor(s)

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