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Proceedings Paper

Anisotropic local melting of semiconductors under light pulse irradiation
Author(s): Yakh'ya V. Fattakhov; Il'dus B. Khaibullin; Rustem M.D. Bayazitov
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Paper Abstract

This paper summarizes the careful investigation of the mechanism and basic regularities of anisotropic local melting of semiconductors subjected to light-pulse irradiation. The dependences of the density, sizes, and shapes of local motion regions on the intensity and duration of light pulses, the type of monocrystalline substrate, as well as the regime of preliminary implantation and ion type are established. The model of superheating in solid phase is used to explain the experimental results. It is shown that the main centers for liquid nuclei formation are the surface defects available before the light irradiation. The influence of the thermoplastic effects caused by both the light pulse itself and the tetrahedral covalent radius of implanted impurity is shown.

Paper Details

Date Published: 1 December 1991
PDF: 8 pages
Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48130
Show Author Affiliations
Yakh'ya V. Fattakhov, Kazan Physical-Technical Institute (Russia)
Il'dus B. Khaibullin, Kazan Physical-Technical Institute (Russia)
Rustem M.D. Bayazitov, Kazan Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1440:
Optical Radiation Interaction with Matter

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