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Proceedings Paper

Computer modeling of the dynamics of nanosecond laser annealing of amorphous thin silicon layers
Author(s): Sergei P. Zhvavyi; Olga L. Sadovskaya
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Paper Abstract

Basic mechanisms of nanosecond laser annealing of ion-impl anted si licon layers are now well -known. It has been demonstrated1-4 that for the inci dent pulse energy density lower than the epitaxial anneal ­ ing threshold, amorphous silicon C a-Si) is parti all y transformed into a course-grai ned polycrystalline silicon CCG p-Si) in the near-surfa­ ce regi on and a fine-grained polysilicon C FG p-Si) lying under i t. Formation of the FG p-Si and CG p-Si is caused by formati on of a hi ghl y supercooled melt Csl -Si) as a resul t of a-Si melting at a temperature T which is 250K lower than the melting temperature of monocryslalli nemili con C c-Si) T and subsequent crystallizati on. It has been assumed in refs. 3,4 mlhat the pri mary melt formed in the near -surface region as a result of laser irradiation crystallizes with the formati on of a CG p-Si layer. Since the latent heat of crys­ tal lization is hi gher than that of a-Si melting C L =0.7L ), under certain condi tions the released energy may cause melli g ofcthe a-Si lying deeper. Crystall ization of the secondary melt l eads to forma­ tion of FG p-Si and the rel eased energy causes melting of a-Si. Hence, as a result of melting at the leadi ng sl -Si/a-Si interface and crys­ tal lization at the traili ng FG p-Si/sl -Si interface, a self-support­ ing propagati on of the melted layer lak es place. However , this model of formati on of the CG p-Si and FG p-Si layers does not resol ve the question of the ini tial crystallizati on stage.

Paper Details

Date Published: 1 December 1991
PDF: 8 pages
Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48129
Show Author Affiliations
Sergei P. Zhvavyi, Institute of Electronics (Belarus)
Olga L. Sadovskaya, Institute of Electronics (Belarus)


Published in SPIE Proceedings Vol. 1440:
Optical Radiation Interaction with Matter
Alexey M. Bonch-Bruevich; Vitali I. Konov; Mikhail N. Libenson, Editor(s)

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