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Proceedings Paper

Influence of defects on dynamics of semiconductors (Ge, Si, GaAs) heating by laser radiation
Author(s): M. Moin
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Paper Abstract

The heating of a layer of semiconductors (Ge, Si, GaAs) was studied as dependent on the energy density of strongly-absorbed laser light using the monitoring of the layer's thermal radiation. The heating is shown to change essentially because of the redistribution of electron- hole plasma generated by the laser and because, with production, annealing or the initial presence of radiationless recombination centers.

Paper Details

Date Published: 1 December 1991
PDF: 6 pages
Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); doi: 10.1117/12.48128
Show Author Affiliations
M. Moin, Institute of Semiconductors (Ukraine)

Published in SPIE Proceedings Vol. 1440:
Optical Radiation Interaction with Matter
Alexey M. Bonch-Bruevich; Vitali I. Konov; Mikhail N. Libenson, Editor(s)

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