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Proceedings Paper

Effect of linewidth enhancement factor in 1.55-um MWQ high-power laser diodes
Author(s): Il Ki Han; Si Hyung Cho; Jung II Lee
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Paper Abstract

1.55 μm­ multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factor (a-factor) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes whose α-factor is 2 rather than 4. As injection current increased, the FWHM of the far-fields also increased regardless of α-factor. This phenomenon was explained by reduction of filament spacing as injection current increased

Paper Details

Date Published: 29 August 2002
PDF: 7 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481055
Show Author Affiliations
Il Ki Han, Korea Institute of Science and Technology (South Korea)
Si Hyung Cho, Korea Institute of Science and Technology (South Korea)
Jung II Lee, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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