Proceedings Paper
Light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer| Format | Member Price | Non-Member Price |
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Paper Abstract
Three types of thin layer were inserted between 1st and 2nd separate confinement heterostructure (SCH) layer of 1.55 μm InGaAaP/InGaAs multi-quantum well (MQW) laser diodes. The three types were Type A (p-InGaAsP, 1x1017/cm3), Type B (p-InGaAsP, 2x1018/cm3), and Type C (p-InP, 2x1018/cm3), respectively. It was shown that the light-current (L-I) characteristics for those three types were similar, while the characteristic temperature (T0) was higher for type B than others.
Paper Details
Date Published: 29 August 2002
PDF: 6 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481052
Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)
PDF: 6 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481052
Show Author Affiliations
Il Ki Han, Korea Institute of Science and Technology (South Korea)
Du Chang Heo, Korea Institute of Science and Technology (North Korea)
Du Chang Heo, Korea Institute of Science and Technology (North Korea)
Won Jun Choi, Korea Institute of Science and Technology (South Korea)
Jung Il Lee, Korea Institute of Science and Technology (South Korea)
Jung Il Lee, Korea Institute of Science and Technology (South Korea)
Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)
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